SSM3K121TU datasheet(4/6 Pages) TOSHIBA

Part #	SSM3K121TU

Description	Silicon N-Channel MOS Type Power Management Switch Applications

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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4 / 6 page

SSM3K121TU

2007-11-01

4

Total Gate Charge Qg (nC)

Dynamic Input Characteristic

0

5

10

4

8

15

10

6

2

Common

Source

ID = 3.2A

VDD=16V

VDD=10V

Drain-Source voltage VDS (V)

IDR – VDS

10

0

0.1

1

0.001

0.01

0.0001

-0.2

-0.6

-0.4

-1.0

-0.8

-1.2

Drain current ID (A)

|Yfs| – ID

0.01

10

0.001

0.1

1

10

0.01

0.1

1

30

3

0.3

0.03

Drain – Source voltage VDS (V)

C – VDS

10

0.1

1

10

100

1000

300

30

Drain current ID (A)

t – ID

1

0.01

100

0.1

1000

1

10

Common Source

VDS = 3 V

Ta

= 25 °C

Common Source

VGS = 0 V

Ta

= 25 °C

G

D

S

IDR

100 °C

25 °C

−25 °C

Common Source

Ta

= 25 °C

f

= 1 MHz

VGS = 0 V

Ciss

Coss

Crss

Common Source

VDD = 10 V

VGS = 0 ∼ 2.5 V

Ta

= 25 °C

RG = 4.7 Ω

toff

tf

ton

tr

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SSM3K121TU Datasheet(PDF) 4 Page - Toshiba Semiconductor

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