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TLP504A_07 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. TLP504A_07
Description  GaAs Ired & Photo−Transistor
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TLP504A,TLP504A
−2
2007-10-01
3
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
10
μA
Capacitance
CT
V = 0, f = 1 MHz
30
pF
Collector
−emitter
breakdown voltage
V(BR) CEO
IC = 0.5 mA
55
V
Emitter
−collector
breakdown voltage
V(BR) ECO
IE = 0.1 mA
7
V
VCE = 24 V
10
100
nA
Collector dark current
ICEO
VCE = 24 V, Ta = 85°C
2
50
μA
Capacitance
collector to emitter
CCE
V = 0, f = 1 MHz
10
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
50
600
Current transfer ratio
IC / IF
IF = 5 mA, VCE = 5 V
Rank GB
100
600
%
60
Saturated CTR
IC / IF (sat)
IF = 1 mA, VCE = 0.4 V
Rank GB
30
%
IC = 2.4 mA, IF = 8 mA
0.4
0.2
Collector
−emitter
saturation voltage
VCE (sat)
IC = 0.2 mA, IF = 1 mA
Rank GB
0.4
V
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Capacitance input to output
CS
VS = 0, f = 1 MHz
0.8
pF
Isolation resistance
RS
VS = 500 V
5×10
10
10
14
AC, 1 minute
2500
AC, 1 second, in oil
5000
Vrms
Isolation voltage
BVS
DC, 1 minute, in oil
5000
Vdc




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