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TLP421F_07 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. TLP421F_07
Description  GaAs IRed & Photo−Transistor
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TLP421F
2007-10-01
1
TOSHIBA Photocoupler GaAs IRed & Photo−Transistor
TLP421F
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission Between Different Voltage Circuits
The TOSHIBA TLP421F consists of a silicone photo−transistor optically
coupled to a gallium arsenide infrared emitting diode in a four lead
plastic DIP (DIP4) with having high isolation voltage
(AC: 5kVRMS (min)).
Absolute maximum ratings and electrical characteristics are the same as
TLP421 technical datasheet.
• Collector−emitter voltage: 80V (min)
• Current transfer ratio: 50% (min)
Rank GB: 100% (min)
• Isolation voltage: 5000 Vrms (min)
• UL recognized: UL1577
• BSI approved: BS EN60065: 2002
Approved no. 8411
BS EN60950-1: 2002
Approved no. 8412
• SEMKO approved: EN60065, EN60950, EN60335
Approved no. 9910249 / 01
Pin Configurations
(top view)
1
2
3
4
1 : ANODE
2 : CATHODE
3 : EMITTER
4 : COLLECTOR
Unit in mm
TOSHIBA
11−5B202
Weight: 0.26 g




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