SSM6K30FE

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Π-MOSⅦ)

SSM6K30FE

○

High speed switching

○

DC-DC Converter

• Small package

• High speed switching

Characteristics

Symbol

Rating

Unit

Drain-Source voltage

20

V

Gate-Source voltage

±20

V

DC

1.2

Drain current

Pulse

2.4

A

Drain power dissipation

500

mW

Channel temperature

150

°C

Storage temperature

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board

(25.4 mm

Marking

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), ensure that the

environment is protected against static electricity. Operators should wear anti-static clothing, and containers

and other objects that come into direct contact with devices should be made of anti-static materials.

Unit: mm

1,2,5,6 : Drain

3

: Gate

4

: Source

JEDEC

―

JEITA

―

TOSHIBA

2-2N1A

Weight: 3 mg (typ.)

6

KA

4

1

2

3

5

4

123

6

5