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SSM6N16FE Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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SSM6N16FE Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 5 page SSM6N16FE 2007-11-01 3 (Q1, Q2 common) ID – VDS ID – VGS RDS (ON) – ID RDS (ON) – VGS RDS (ON) – Ta Vth – Ta Drain-Source voltage VDS (V) Gate-Source voltage VGS (V) Drain current ID (mA) Gate-Source voltage VGS (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C) 2.5 V VGS = 1.5 V 0 1 4 12 1000 10 2 6 8 100 Common source Ta = 25°C 10 4 V 0 0 100 250 12 1.5 0.5 50 150 200 VGS = 1.3 V 1.5 1.7 1.9 Common source Ta = 25°C 3 4 10 2.5 2.3 2.1 04 10 8 26 0 2 6 1 4 5 3 25°C Ta = 100°C −25°C Common source ID = 10 mA 02 3 1 0.01 1 1000 0.1 10 100 Ta = 100°C Common source VDS = 3 V −25°C 25°C 0 2 8 6 4 2.5 V, 10 mA VGS = 1.5 V, ID = 1 mA Common source −25 50 150 125 0 75 25 100 4 V, 10 mA Common source ID = 0.1 mA VDS = 3 V −25 50 150 125 0 75 25 100 0 0.4 2 1.2 1.6 0.8 |
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