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TA48S02F Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TA48S02F Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 11 page TA48S018,02,025,03,033,05F 2006-11-06 3 Block Diagram Absolute Maximum Rating (Ta = 25°C) (Note 2) Characteristic Symbol Rating Unit Input voltage VIN 16 V EN Input voltage VEN 16 V Output current IOUT 1 A Operating temperature Topr −40~85 °C Junction temperature Tj 150 °C Storage temperature Tstg −55~150 °C Ta = 25°C 1 Power dissipation Tc = 25°C PD 10 W junction-ambient Rth(j-a) 125 Thermal resistance junction-case Rth(j-c) 12.5 °C/W Note 2: Do not apply current and voltage (including reverse polarity) to any pin that is not specified. Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Protection Function (Reference) (Note 3) Characteristics Symbol Test Condition Min Typ. Max Unit Over temperature TSD (Tj) ⎯ ⎯ 160 ⎯ °C Peak circuit current IPEAK VIN = VOUT + 2 V, Tj = 25°C ⎯ 1.5 ⎯ A Short circuit current ISC VIN = VOUT + 2 V, Tj = 25°C ⎯ 1.5 ⎯ A Note 4: Ensure that the devices operate within the limits of the maximum rating when in actual use. GND ON/OFF function Over temperature protection ASO protection Over current protection Control circuit EN IN OUT Reference voltage |
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