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TA58L10S Datasheet(PDF) 9 Page - Toshiba Semiconductor |
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TA58L10S Datasheet(HTML) 9 Page - Toshiba Semiconductor |
9 / 12 page TA58L05, 06, 08, 09, 10, 12, 15S 2006-11-02 9 TA58L05S VIN = 14 V IOUT = 5 mA Output current IOUT (A) VOUT – IOUT Input voltage VIN (V) IB – VIN VOUT – Tj Junction temperature Tj (°C) 4.5 5.5 4.7 5.1 4.9 5.3 0 -50 150 50 100 5.4 5.2 5.0 4.8 4.6 Input voltage VIN (V) VOUT – VIN 0 5 6 0 6 10 3 2 2 4 1 4 8 TA58L05S Tj = 25 °C Input voltage VIN (V) VOUT – VIN 0 5 6 0 20 35 3 2 5 4 1 15 30 TA58L05S Tj = 25 °C 10 25 IOUT = 0.1 A 5 mA 5 mA IOUT = 0.1 A 0 5 6 3 2 4 1 0 0.4 0.7 0.1 0.3 0.6 0.2 0.5 TA58L05S VIN = 14 V Tj = 25 °C TA58L05S Tj = 25 °C IOUT = 0.1 A 5 mA 0 6 10 2 4 8 0 25 30 5 20 10 15 Ambient temperature Ta (°C ) PDmax. – Ta 0 4 8 12 20 24 0 20 40 80 100 120 Thermal resistance (°C/W) Rth(j-c) : 6.25 Rth(j-a) : 62.5 16 60 140 160 Single Ta = Tc |
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