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TA2109F Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TA2109F Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 9 page  TA2109F 2002-08-06 4 Electrical Characteristics (unless otherwise specified, VCC = 5 V, Ta = 25°C) AC Characteristics Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Assured supply voltage VCC 1 ― 4.5 5.0 5.5 V Power supply Power supply voltage ICC 1 SEL = VCC 18 24 30 mA Reference voltage 2VR 1 ― 4.0 4.2 4.4 V Output current IOH2 1 ∆V = −0.1 V 3.0 ― ― mA Reference voltage: 2VREF Input current IOL2 1 ∆V = +0.1 V 0.1 ― ― mA Reference voltage VR 1 ― 2.0 2.1 2.2 V Reference voltage limit ∆VR 1 2 × VR/2 VR −1 −3.0 0.0 +3.0 % Output current IOH1 1 ∆V = −0.1 V 5.0 ― ― mA Reference voltage: VREF Input current IOL1 1 ∆V = +0.1 V 5.0 ― ― mA Transfer resistance RT 1 f = 100 kHz, RNF = 22 kΩ 117 130 143 kΩ Frequency characteristic fc 1 −3dB point ― 5.0 ― MHz Output slew rate SR 1 CRFO = 20 pF 10 20 ― V/µs Noise/Distortion rate THD 1 f = 100 kHz, VRFO = 1.2 Vp-p ― −40 ― dB Upper limit output voltage VOH 1 GND reference 3.6 ― ― V Lower limit output voltage VOL 1 GND reference ― ― 0.7 V RF1 FPI (FNI) → RFO Permissive load resistance RLM 1 ― 10 ― ― kΩ Lower limit gain voltage GV1 1 f = 100 kHz, RFGC = 0.6 V 0.66 0.73 0.80 V/V Upper limit gain voltage GV2 1 f = 100 kHz, RFGC = 3.6 V 1.60 1.75 1.90 V/V Frequency characteristic fc 1 −3dB point ― 5.0 ― MHz Output slew rate SR 1 CRFGO = 20 pF 10 20 ― V/µs Upper limit output voltage VOH 1 GND reference 3.6 ― ― V Lower limit output voltage VOL 1 GND reference ― ― 0.7 V Noise/Distortion rate THD 1 f = 100 kHz, VRFGO = 1.2 Vp-p ― −40 ― dB RF2 (AGC) RFO → RFGO Permissive load resistance RLM 1 ― 10 ― ― kΩ Gain voltage Gv 1 f = 1 kHz ― 200 ― V/V Operation reference voltage VMDI 1 VLDO = 3.5 VDC 170 178 192 mV LD Off voltage VLDOP 1 LDC = L, VCC reference, SEL = L −0.7 ― ― V APC MDI → LDO Input bias current II 1 VMDI = 178 mV −200 ― +200 nA Transfer resistance RT 1 f = 1 kHz, RNF = 39 kΩ 198 220 242 kΩ Gain balance GB 1 ― −1.0 ― +1.0 dB Frequency characteristic fc 1 −3dB point ― 22 ― kHz Output offset voltage VOS 1 VR reference, input open −30 ― +30 mV Noise/distortion rate THD 1 f = 1 kHz, VFEO = 2.4 Vp-p ― −40 ― dB Upper limit output voltage VOH 1 GND reference 3.8 ― ― V Lower limit output voltage VOL 1 GND reference ― ― 0.5 V FE FNI (FPI) → FEO Permissive load resistance RLM 1 ― 10 ― ― kΩ |
Similar Part No. - TA2109F_02 |
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Similar Description - TA2109F_02 |
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