QID0630006 datasheet(2/4 Pages) POWEREX

Part #	QID0630006

Description	Dual IGBT H-Series Hermetic Module (300 Amperes/600 Volts)

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Manufacturer	POWEREX [Powerex Power Semiconductors]

Direct Link	http://www.pwrx.com

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2 / 4 page

QID0630006

Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272

Dual IGBT H-Series

Hermetic Module

300 Amperes/600 Volts

Page 2

4/11/2001

Maximum Ratings, Tj=25

°°°°C unless otherwise specified

Ratings

Symbol

Units

Collector Emitter Voltage

VCES

600

Volts

Gate Emitter Voltage

VGES

±20

Volts

Collector Current

IC

300

Amperes

Peak Collector Current

ICM

600*

Amperes

Diode Forward Current

IFM

300

Amperes

Diode Forward Surge Current

IFM

600*

Amperes

Power Dissipation

Pd

1100

Watts

V Isolation

VRMS

2500

Volts

Static Electrical Characteristics, Tj=25

°°°°C unless otherwise specified

Characteristic

Symbol

Test

Conditions

Min

Typ

Max

Units

Collector Cutoff Current

ICES

VCE=VCES

1.0

mA

Gate Leakage Current

IGES

VCE=0V

0.5

µA

Gate-Emitter Threshold Voltage

VGE(th)

IC=30mA,

VCE=10V

4.5

6.0

7.5

Volts

Collector-Emitter Saturation Voltage

VCE(sat)

IC=300A,

VGE=15V

2.1

2.8

Volts

VCE(sat)

IC=300A,

VGE=15V,

Tj=150

°C

2.15

Volts

Total Gate Charge

QG

VCC=300V,

IC=300A,

VGS=15V

900

nC

Diode Forward Voltage

VFM

IE=300A,

VGS=0V

2.8

Volts

Dynamic Electrical Characteristics, Tj=25

°°°°C unless otherwise specified

Characteristic

Symbol

Test

Conditions

Min

Typ

Max

Units

Input Capacitance

Cies

VGE=0V

30

nF

Output Capacitance

Coes

VCE=10V

10.5

nF

Reverse Transfer Capacitance

Cres

f=1MHz

6

nF

Turn on Delay time

td(on)

VCC=300V

350

nS

Rise Time

tr

IC=300A

600

nS

Turn off delay time

td(off)

VGE1=VGE2=15

V

350

nS

Fall Time

tf

RG=2.1Ω

300

nS

Diode Reverse Recovery Time

trr

IE=300A

150

nS

Diode reverse Recovery Charge

Qrr

diE/dt=-

600A/

µS

0.81

µC

Thermal and Mechanical Characteristics, Tj=25

°°°°C unless otherwise specified

Characteristic

Symbol

Test

Conditions

Min

Typ

Max

Units

Thermal Resistance, Junction to Case

RθJC

Per IGBT

0.11

°C/W

Thermal Resistance, Junction to Case

RθJC

Per Diode

0.24

°C/W

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