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TA8552AFN Datasheet(PDF) 10 Page - Toshiba Semiconductor |
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TA8552AFN Datasheet(HTML) 10 Page - Toshiba Semiconductor |
10 / 16 page TA8552AFN 2002-10-30 10 【 Calculation of ωn】 The capturing time of PLL is expected as above 11.5µs. Therefore (ωn) is deternimated as the following: ωn = 6 / (11.5×10-6) = 552krad / s 【 Calculation of K0 (VCO control gain)】 K0 is determined as the following; K0 = 40MHz / V = 251.3Mrad / V 【 Calculation of Kf (phase detector gain)】 Kf is estimated as the following (the current of charge pump is set as ±50µA.) Kf = 2 1 ・ F 2 1 ×50×10-6 = 3.98×10-6(A / rad) The current of charge pump (Ichp) is set by an external resister (Rcp1), connected with Rcp1 (26pin). When "H"level voltage inputs to MODESEL (12pin), Ichp is set as the following: Ichp = 2×1.3 / RCP1→RCP1 = 2×1.3 / Ichp = 2×1.3 / 50×10-6 = 52×103Ω Therefore, when RCP1 is 52kΩ, Ichp is set as ±50µA 【 Calculation of external devices of loop-filter】 F 6 - 10 1800 2 ) 3 10 (522 2 6 10 251.3 -6 10 3.98 n 2 0 K K L1 C ´ = ´ ´ ´ ´ ´ = w ´ f = W ´ = ´ ´ ´ ´ = w z = 3 10 1.5 3 10 522 12 - 10 1800 0.7 2 n L1 C 2 L R CL2 = CL1 / 10 = 180pF |
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