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P10C68-35IGDPBS Datasheet(PDF) 6 Page - Zarlink Semiconductor Inc

Part # P10C68-35IGDPBS
Description  CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM
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Manufacturer  ZARLINK [Zarlink Semiconductor Inc]
Direct Link  http://www.zarlink.com
Logo ZARLINK - Zarlink Semiconductor Inc

P10C68-35IGDPBS Datasheet(HTML) 6 Page - Zarlink Semiconductor Inc

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P10C68/P11C68
6
WRITE CYCLE 1 : W (BAR) CONTROLLED
(See notes 8 and 13)
Commercial and Industrial Temperature Range
tWHQV
W
tAVAV
tELQV
tELQX
tEHICCL
tEHQZ
tGHQZ
tGLQX
tELICCH
DATA VALID
STANDBY
ACTIVE
DQ (DATA OUT)
ADDRESS
E
G
ICC
tGLQV
Figure 5. READ CYCLE 2 timing diagram (see note 9).
Standard
tAVAV
tWLWH
tELWH
tDVWH
tWHDX
tAVWH
tAVWL
tWHAX
tWLQZ
tWHQZ
Alternative
tWC
tWP
tCW
tDW
tDH
tAW
tAS
tWR
tWZ
tOW
Parameter
Write cycle time
Write pulse width
Chip enable to end of write
Data set-up to end of write
Data hold after end of write
Address set-up to end of write
Address set-up to start of write
Address hold after end of write
Write enable to output disable
Output active after end of write
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
11, 14
P10C68-45
P11C68-45
P10C68-35
P11C68-35
Symbol
Min.
45
35
35
30
0
35
0
0
5
Max.
35
Min.
45
35
35
30
0
35
0
0
5
Max.
35
NOTES
13.
E (bar) or W (bar) must be ≥ VIH during address transitions.
14.
If W (bar) is low when E (bar) goes low, the outputs remain in the high impedance state.


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