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P10C68-35IGDPBS Datasheet(PDF) 6 Page - Zarlink Semiconductor Inc |
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P10C68-35IGDPBS Datasheet(HTML) 6 Page - Zarlink Semiconductor Inc |
6 / 17 page P10C68/P11C68 6 WRITE CYCLE 1 : W (BAR) CONTROLLED (See notes 8 and 13) Commercial and Industrial Temperature Range tWHQV W tAVAV tELQV tELQX tEHICCL tEHQZ tGHQZ tGLQX tELICCH DATA VALID STANDBY ACTIVE DQ (DATA OUT) ADDRESS E G ICC tGLQV Figure 5. READ CYCLE 2 timing diagram (see note 9). Standard tAVAV tWLWH tELWH tDVWH tWHDX tAVWH tAVWL tWHAX tWLQZ tWHQZ Alternative tWC tWP tCW tDW tDH tAW tAS tWR tWZ tOW Parameter Write cycle time Write pulse width Chip enable to end of write Data set-up to end of write Data hold after end of write Address set-up to end of write Address set-up to start of write Address hold after end of write Write enable to output disable Output active after end of write Units ns ns ns ns ns ns ns ns ns ns Notes 11, 14 P10C68-45 P11C68-45 P10C68-35 P11C68-35 Symbol Min. 45 35 35 30 0 35 0 0 5 Max. 35 Min. 45 35 35 30 0 35 0 0 5 Max. 35 NOTES 13. E (bar) or W (bar) must be ≥ VIH during address transitions. 14. If W (bar) is low when E (bar) goes low, the outputs remain in the high impedance state. |
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