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P10C68-45IGDPBS Datasheet(PDF) 9 Page - Zarlink Semiconductor Inc

Part # P10C68-45IGDPBS
Description  CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM
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Manufacturer  ZARLINK [Zarlink Semiconductor Inc]
Direct Link  http://www.zarlink.com
Logo ZARLINK - Zarlink Semiconductor Inc

P10C68-45IGDPBS Datasheet(HTML) 9 Page - Zarlink Semiconductor Inc

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P10C68/P11C68
9
STORE CYCLE 2 : E (BAR) CONTROLLED
(See note 13)
Standard
tELQX1
tNLEL
tWLEL
tELNH
tGHEL
Alternative
tSTORE
tWC
Parameter
Store cycle time
NE (bar) set-up to chip enable
Write enable wet-up to chip enable
Chip enable to NE (bar) rise
Output disable set-up to E (bar) fall
Symbol
Notes
17
18
Units
ms
ns
ns
ns
ns
Min.
0
0
45
0
Max.
10
Min.
0
0
45
0
P10C68-35
P10C68-45
Max.
10
NOTES
16. E (bar), G (bar), NE (bar) and W (bar) must make the transition between VIH(max) to VIL(max), or VIL(max) to VIH(min) in a
monotonic fashion.
17. Measured with W (bar) and NE (bar) both returned high, and G (bar) returned low. Note that store cycles are inhibited/aborted
by Vcc <3.3V (STORE inhibit).
18. Once twc has been satisfied by NE (bar), G (bar), W (bar) and E (bar) the store cycle is completed automatically, ignoring all
inputs. Any of NE (bar), G (bar), W (bar) or E (bar) may be used to terminate the store initiation cycle.
tGHNL
tNLWL
tWLNH
tELWL
tWLQX
NE
G
W
E
DQ
(DATA
OUT)
HIGH IMPEDANCE
Figure 9. STORE CYCLE 1: W (bar) controlled timing diagram (see note 16).
tGHEL
tNLEL
tELNH
tWLEL
tELQX1
NE
W
E
DQ
(DATA
OUT)
HIGH IMPEDANCE
G
Figure 10. STORE CYCLE 2: E (bar) controlled timing diagram (see note 16).


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