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TB6562ANG Datasheet(PDF) 6 Page - Toshiba Semiconductor |
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TB6562ANG Datasheet(HTML) 6 Page - Toshiba Semiconductor |
6 / 19 page TB6562ANG/AFG 2007-3-22 6 Electrical Characteristics (VCC = 24 V, Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit ICC1 XT1A = XT2A = H, XT1B = XT2B = H Output = Open ⎯ 6.5 10 ICC2 XT1A = XT2A = L, XT1B = XT2B = L Output = Open ⎯ 7.0 12 Supply current ICC3 ⎯ Standby mode ⎯ 2.0 4.0 mA VINH ⎯ 2 ⎯ 5.5 Input voltage VINL ⎯ ⎯ -0.2 ⎯ 0.8 Input hysteresis voltage VIN (HYS) ⎯ (Target spec.) ⎯ 0.4 ⎯ V IINH VIN = 5 V 30 50 75 Control circuit (Note 1) Input current IINL ⎯ VIN = 0 V ⎯ ⎯ 5 μA VINSH ⎯ 2.3 ⎯ 5.5 Input voltage VINSL ⎯ ⎯ –0.2 ⎯ 0.8 Input hysteresis voltage VIN (HYS) ⎯ (Target spec.) ⎯ 0.4 ⎯ V IINSH VIN = 5 V 30 50 75 Standby circuit Input current IINSL ⎯ VIN = 0 V ⎯ ⎯ 5 μA IO = 0.2 A ⎯ 1.5 2.0 Output ON-resistance Ron (U + L) ⎯ IO = 1.5 A ⎯ 1.5 2.0 Ω IL (U) VCC = 40 V ⎯ ⎯ 10 Output leakage current IL (L) ⎯ VCC = 40 V ⎯ ⎯ 10 μA VF (U) IO = 1.5 A ⎯ 1.3 2.0 Diode forward voltage VF (L) ⎯ IO = 1.5 A ⎯ 1.3 2.0 V Internal reference voltage Vreg ⎯ 1 mA 4.75 5 5.25 V Input current Iref ⎯ Vref = 0.5 V ⎯ 5 10 μA Vref (1/10) ⎯ X1 = X2 = L Vref = 5 V 0.45 0.5 0.55 Vref (1/15) ⎯ X1 = L, X2 = H Vref = 5 V 0.28 0.33 0.38 Vref circuit Current limit voltage Vref (1/30) ⎯ X1 = H, X2 = L Vref =5 V 0.12 0.17 0.22 V Triangular-wave oscillation frequency fosc ⎯ C = 4700 pF 88 110 132 kHz Thermal shutdown circuit operating temperature TSD ⎯ (Target spec.) ⎯ 160 ⎯ °C Note 1: Phase, X1 and X2 pins |
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