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TC7SA08FU Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TC7SA08FU Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 9 page TC7SA08F/FU 2007-11-01 1 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SA08F,TC7SA08FU 2-Input AND Gate Features • Low voltage operation : VCC = 1.8~3.6 V • High speed operation : tpd = 2.8 ns (max) (VCC = 3.0~3.6 V) : tpd = 3.7 ns (max) (VCC = 2.3~2.7 V) : tpd = 7.4 ns (max) (VCC = 1.8 V) • High Output current : IOH/IOL = ±24 mA (min) (VCC = 3.0 V) : IOH/IOL = ±18 mA (min) (VCC = 2.3 V) : IOH/IOL = ±6 mA (min) (VCC = 1.8 V) • 3.6-V tolerant input • 3.6-V power down protection output • TC74VCX08FT equivalent Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Power supply voltage VCC −0.5~4.6 V DC input voltage VIN −0.5~4.6 V −0.5~4.6 (Note 1) DC output voltage VOUT −0.5~VCC + 0.5 (Note 2) V Input diode current IIK −50 mA Output diode current IOK −50 (Note 3) mA DC output current IOUT ±50 mA Power dissipation PD 200 mW DC VCC/ground current ICC ±100 mA Storage temperature range Tstg −65~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: VCC = 0 V Note 2: High or low state. IOUT absolute maximum rating must be observed. Note 3: VOUT < GND TC7SA08F TC7SA08FU Weight SSOP5-P-0.95 : 0.016 g (typ.) SSOP5-P-0.65A : 0.006 g (typ.) |
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