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QM75E2Y-H Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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QM75E2Y-H Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 6 page Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Transistor part including D1, Tj=25 °C) Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25 °C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 75 75 350 4.5 750 Unit V V V V A A W A A ABSOLUTE MAXIMUM RATINGS (Diode part (D2), Tj=25 °C) Symbol VRRM VRSM VR (DC) IDC IFSM I2t Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage DC current Surge (non-repetitive) forward current I2t for fusing Conditions DC circuit, resistive, inductive load Peak value of one cycle of 60Hz (half wave) Value for one cycle of surge current Ratings 600 720 480 75 1500 9.45 × 103 Unit V V V A A A2s ABSOLUTE MAXIMUM RATINGS (Common) Symbol Tj Tstg Viso — — Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight Conditions Charged part to case, AC for 1 minute Main terminal screw M5 Mounting screw M6 Typical value Ratings –40~150 –40~125 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 Unit °C °C V N·m kg·cm N·m kg·cm g Unit mA mA mA V V V — µs µs µs °C/W °C/W °C/W Limits Min. — — — — — — 75/100 — — — — — — Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain Switching time Thermal resistance (junction to case) Contact thermal resistance (case to fin) Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=75A, IB=1A –IC=75A (diode forward voltage) IC=75A, VCE=2V/5V VCC=300V, IC=75A, IB1=–IB2=1.5A Transistor part Diode part Conductive grease applied Typ. — — — — — — — — — — — — — Max. 1.0 1.0 200 2.0 2.5 1.85 — 2.5 12 3.0 0.35 1.3 0.15 ELECTRICAL CHARACTERISTICS (Transistor part including D1, Tj=25 °C) |
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