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TC75S51FU Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TC75S51FU Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 10 page TC75S51F/FU/FE 2007-11-01 1 TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S51F,TC75S51FU,TC75S51FE Single Operational Amplifier The TC75S51F/TC75S51FU/TC75S51FE is a CMOS single- operation amplifier which incorporates a phase compensation circuit. It is designed for use with a low-voltage, low-current power supply; this differentiates this device from conventional general-purpose bipolar op-amps. Features • Low-voltage operation : VDD = ±0.75~±3.5 V or 1.5~7 V • Low-current power supply : IDD (VDD = 3 V) = 60 μA (typ.) • Built-in phase-compensated op-amp, obviating the need for any external device • Ultra-compact package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage VDD, VSS 7 V Differential input voltage DVIN ±7 V Input voltage VIN VDD~VSS V TC75S51F/FU 200 Power dissipation TC75S51FE PD 100 mW Operating temperature Topr −40~85 °C Storage temperature Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). TC75S51F TC75S51FU TC75S51FE Weight SSOP5-P-0.95 : 0.014 g (typ.) SSOP5-P-0.65A : 0.006 g (typ.) SON5-P-0.50 : 0.003 g (typ.) |
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