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TC75S56FU Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TC75S56FU Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 9 page TC75S56F/FU/FE 2007-11-01 3 Electrical Characteristics (unless otherwise specified, VDD = 5 V, VSS = GND, Ta = 25°C) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Input offset voltage VIO ⎯ ⎯ ⎯ ±1 ±7 mV Input offset current IIO ⎯ ⎯ ⎯ 1 ⎯ pA Input bias current II ⎯ ⎯ ⎯ 1 ⎯ pA Common mode input voltage CMVIN ⎯ ⎯ 0 ⎯ 4.1 V Supply current IDD (Note) ⎯ ⎯ ⎯ 11 22 μA Voltage gain GV ⎯ ⎯ ⎯ 94 ⎯ dB Sink current Isink ⎯ VOL = 0.5 V 13 25 ⎯ mA Source current Isource ⎯ VOH = 4.5 V 9 21 ⎯ mA VOL ⎯ Isink = 5.0 mA ⎯ 0.1 0.3 Output voltage VOH ⎯ Isource = 5.0 mA 4.7 4.9 ⎯ V Operating supply voltage VDD ⎯ ⎯ 1.8 ⎯ 7.0 V tPLH (1) ⎯ Over drive = 100 mV ⎯ 680 ⎯ Propagation delay time (turn on) tPLH (2) ⎯ TTL step input ⎯ 500 ⎯ ns tPHL (1) ⎯ Over drive = 100 mV ⎯ 250 ⎯ Propagation delay time (turn off) tPHL (2) ⎯ TTL step input ⎯ 380 ⎯ ns tTLH ⎯ Over drive = 100 mV ⎯ 60 ⎯ Response time tTHL ⎯ Over drive = 100 mV ⎯ 8 ⎯ ns Electrical Characteristics (unless otherwise specified, VDD = 3 V, VSS = GND, Ta = 25°C) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Input offset voltage VIO ⎯ ⎯ ⎯ ±1 ±7 mV Input offset current IIO ⎯ ⎯ ⎯ 1 ⎯ pA Input bias current II ⎯ ⎯ ⎯ 1 ⎯ pA Common mode input voltage CMVIN ⎯ ⎯ 0 ⎯ 2.1 V Supply current IDD (Note) ⎯ ⎯ ⎯ 10 20 μA Sink current Isink ⎯ VOL = 0.5 V 6 18 ⎯ mA Source current Isource ⎯ VOH = 2.5 V 3 15 ⎯ mA VOL ⎯ Isink = 5.0 mA ⎯ 0.15 0.35 Output voltage VOH ⎯ Isource = 5.0 mA 2.65 2.85 ⎯ V Propagation delay time (turn on) tPLH ⎯ Over drive = 100 mV ⎯ 550 ⎯ ns Propagation delay time (turn off) tPHL ⎯ Over drive = 100 mV ⎯ 250 ⎯ ns tTLH ⎯ Over drive = 100 mV ⎯ 30 ⎯ Response time tTHL ⎯ Over drive = 100 mV ⎯ 8 ⎯ ns Note: This device’s current consumption increases as its operating frequency increases. Note that the power dissipation should not exceed the allowable power dissipation. |
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