M36W0R6030B0ZAQE datasheet(8/26 Pages) STMICROELECTRONICS

Part #	M36W0R6030B0ZAQE

Description	64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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M36W0R6030T0, M36W0R6030B0

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FUNCTIONAL DESCRIPTION

The Flash memory and SRAM components have

separate power supplies but share the same

grounds. They are distinguished by three Chip En-

able inputs: EF for the Flash memory and E1S and

E2S for the SRAM.

Recommended operating conditions do not allow

more than one device to be active at a time. The

most common example is simultaneous read oper-

ations on one of the Flash and the SRAM which

would result in a data bus contention. Therefore it

is recommended to put the other devices in the

high impedance state when reading the selected

device.

Figure 4. Functional Block Diagram

AI08536C

E1S

E2S

GS

WS

DQ0-DQ15

VDDF

A0-A18

A19-A21

8 Mbit SRAM

GF

UBS

LBS

WAITF

64 Mbit

Flash

Memory

VDDS

EF

KF

WF

LF

RPF

WPF

VPPF VDDQ

VSS

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