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TLN119 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TLN119 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page TLN119(F) 2007-10-01 1 TOSHIBA Infrared LED GaAs Infrared Emitter TLN119(F) Lead(Pb)-Free Printers, Fax Machines Home Electric Equipment Opto−Electronic Switches • φ3.1mm plastic package • Radiant intensity: IE = 5mW / sr (typ.) • Harf−angle value: θ1 / 2 = ±30°(typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 60 mA Forward current derating (Ta > 25°C) ΔIF / °C −0.8 mA / °C Pulse forward current (Note 1) IFP 600 mA Reverse voltage VR 5 V Operating temperature range Topr −25~85 °C Storage temperature range Tstg −30~100 °C Soldering temperature (3 s) Tsol (Note 2) 260 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width ≦ 100μs, repetitive frequency = 100Hz Note 2: Soldering must be performed 2mm from the bottom of the package body. Optical And Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VR IF = 10 mA 1.00 1.15 1.30 V Reverse current IR VR = 5 V ⎯ ⎯ 10 μA TLN119 (F) 2.5 5.0 10.0 Radiant intensity IE IF = 20 mA TLN119 (B,F) 4.2 ⎯ 10.0 mW / sr Radiant power PO IF = 20 mA ⎯ 4.5 ⎯ mW Peak emission wavelength λP IF = 20 mA ⎯ 945 ⎯ nm Spectral line half width Δλ IF = 20 mA ⎯ 50 ⎯ nm Half value angle θ 2 1 IF = 20 mA ⎯ ±30 ⎯ ° Unit: mm TOSHIBA 4−4E1 Weight: 0.12 g (typ.) Pin Connection 1. Anode 2. Cathode 12 |
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