NCP4331

http://onsemi.com

5

MAXIMUM RATINGS

Symbol

Rating

Value

Unit

BST, HB

Bootstrap and “Half-Bridge” Node Inputs (Referenced to GND)

-2, +40

V

Bootstrap Pin Voltage Referenced to the HB Node

-0.3, +10

V

Internal Regulator Input

-0.3, +30

V

Pins 1, 2, 3, 4, 5, 6, 7, 8 and 9

-0.3, +5

V

Supply Voltage

-0.3, +10

V

Thermal Resistance (TSSOP-16 and SOIC-16)

145

°C/W

ESD Capability, Human Body Model (HBM)

2

kV

ESD Capability, Machine Model (MM) (Note 2)

200

V

Operating Temperature Range (Note 1)

-40, +125

°C

Maximum Junction Temperature

150

°C

Storage Temperature Range

-65 to 150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. The maximum junction temperature should not be exceeded.

2. The Machine Model ESD capability is 150 V for Pin 9.

Symbol

Rating

Min

Typ

Max

Unit

HIGH-SIDE OUTPUT STAGE

-

3

6

W

-

2

4

W

Rise and Fall Times:

-

-

13

8

20

15

ns

Delay from Low-Side Gate Drive Low (High) to High-Side Drive High

(Low) (Note 6)

35

55

75

ns

LOW-SIDE OUTPUT STAGE

-

3

6

W

-

2

4

W

Rise and Fall Times:

-

-

13

8

20

15

ns

CURRENT CONTROL ERROR AMPLIFIER (Auxiliary Error Amplifier)

-500

-100

0

nA

-500

-100

0

nA

Input Offset Voltage (Note 5)

-5

1

5

mV

BW

Gain Bandwidth

-

4

-

MHz

Open Loop Voltage Gain

-

70

-

dB

Pin 1

0

-

0.5

V

3. The risetime is the time needed by the drive to go from 10% to 90% of the supply voltage. The fall time is the time required by the drive

to drop from 90% to 10% of its supply voltage. These times are not tested in production but only guaranteed by design.

5. Guaranteed by characterization and design.

6. This delay is specified with the HB pin being grounded. In typical application where the HB node is pulsing, the delay is 70 ns typically