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2SK4178-S27-AY Datasheet(PDF) 1 Page - NEC |
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2SK4178-S27-AY Datasheet(HTML) 1 Page - NEC |
1 / 8 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR 2SK4178 SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. D19080EJ1V0DS00 (1st edition) Date Published December 2007 NS Printed in Japan 2007 DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 m Ω MAX. (VGS = 10 V, ID = 30 A) • Low gate to drain charge QGD = 3.7 nC TYP. (VDD = 15 V, ID = 30 A) • 4.5 V drive available ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE 2SK4178(1)-S27-AY Note Tube 75 p/tube TO-251 (MP-3-b) typ. 0.34 g 2SK4178-ZK-E1-AY Note 2SK4178-ZK-E2-AY Note Pure Sn (Tin) Tape 2500 p/reel TO-252 (MP-3ZK) typ. 0.27 g Note Pb-free (This product does not contain Pb in external electrode). ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25 °C) ID(DC) ±48 A Drain Current (pulse) Note1 ID(pulse) ±144 A Total Power Dissipation (TC = 25 °C) PT1 33 W Total Power Dissipation (TA = 25 °C) PT2 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current Note2 IAS 23 A Single Avalanche Energy Note2 EAS 52.9 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25 °C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 0.1 mH (TO-251) (TO-252) |
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