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2N2222 Datasheet(PDF) 1 Page - STMicroelectronics

Part No. 2N2222
Description  HIGH-SPEED SWITCHES
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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2N2218-2N2219
2N2221-2N2222
January 1989
HIGH-SPEED SWITCHES
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
VCBO
Collector-base Voltage (IE =0)
60
V
VCEO
Collector-emitter Voltage (IB =0)
30
V
VEBO
Emitter-base Voltage (I C =0)
5
V
I C
Collector Current
0.8
A
Pto t
Total Power Dissipation at T amb
≤ 25 °C
for 2N2218 and 2 N22 19
for 2N2221 and 2 N22 22
at T cas e
≤ 25 °C
for 2N2218 and 2 N22 19
for 2N2221 and 2 N22 22
0.8
0.5
3
1.8
W
W
W
W
T stg
Storage Temperature
– 65 to 200
°C
T j
Junction Temperature
175
°C
DESCRIPTION
TO-18
TO-39
INTERNAL SCHEMATIC DIAGRAM
2N2218/2N2219 approved to CECC 50002-
100, 2N2221/2N2222 approved to CECC
50002-101 available on request.
The 2N2218, 2N2219, 2N2221 and 2N2222 are sili-
con planar
epitaxial NPN transistors in Jedec
TO-39 (for 2N2218 and 2N2219) and in Jedec
TO-18 (for 2N2221 and 2N2222) metal cases. They
are designed for high-speed switching applications
at collector currents up to 500 mA, and feature use-
ful current gain over a wide range of collector cur-
rent, low leakage currents and low saturation volt-
ages.
1/5




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