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TLP160G_07 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. TLP160G_07
Description  PHOTOCOUPLER GAAS IRED & PHOTO TRIAC
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TLP160G
2007-10-01
3
Individual Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF=10mA
1.0
1.15
1.3
V
Reverse current
IR
VR=5V
10
μA
Capacitance
CT
V=0, f=1MHz
30
pF
Peak off
−state current
IDRM
VDRM=400V
10
1000
nA
Peak on
−state voltage
VTM
ITM=70mA
1.7
2.8
V
Holding current
IH
0.6
mA
Critical rate of rise
of off
−state voltage
dv / dt
Vin=120Vrms, Ta=85°C
(Fig.1)
200
500
V / μs
Critical rate of rise
of commutating voltage
dv / dt(c)
IT=15mA, Vin=30Vrms
(Fig.1)
0.2
V / μs
Coupled Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Trigger LED current
IFT
VT=3V
5
10
mA
Capacitance input to output
Cs
VS=0, f=1MHz
0.8
pF
Isolation resistance
RS
VS=500V, R.H. ≤ 60%
1×10
12
10
14
AC, 1 minute
2500
AC, 1 second, in oil
5000
Vrms
Isolation voltage
BVS
DC, 1 minute, in oil
5000
Vdc
Turn
−on time
tON
VD=6→4V, RL = 100Ω
IF=rated IFT×1.5
30
100
μs
Fig.1 dv / dt Test Circuit
1
6
3
4
5V,VCC
0V
Vin
RL
2kΩ
dv / dt (c)
VCC
+
dv / dt
Rin
120Ω




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