Data Sheet D15310EJ3V0DS

8

NP80N03EDE, NP80N03KDE, NP80N03CDE, NP80N03DDE, NP80N03MDE, NP80N03NDE

5)TO-220 (MP-25K)

6)TO-262 (MP-25SK)

4

10.0

± 0.2

3.8

± 0.2

φ

4.45

± 0.2

1.3

± 0.2

0.8

± 0.1

0.5

± 0.2

2.5

± 0.2

1.27

± 0.2

12 3

2.54 TYP.

2.54 TYP.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

4

12 3

10.0

± 0.2

4.45

± 0.2

1.3

± 0.2

0.8

± 0.1

1.27

± 0.2

0.5

± 0.2

2.5

± 0.2

2.54 TYP.

2.54 TYP.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Drain

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as

possible, and quickly dissipate it once, when it has occurred.