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2N3725 Datasheet(PDF) 2 Page - STMicroelectronics |
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2N3725 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 6 page ELECTRICAL CHARACTERISTICS (Tamb =25 °C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO Collector Cutoff Current (IE =0) VCB =60 V VCB =60 V T amb =100 °C 1.7 120 µA µA V(BR)CBO Collector-base Breakdown Voltage (IE =0) I C =10 µA80 V V(BR)CES Collector-emitter Breakdown Voltage (VBE =0) I C =10 µA80 V V(BR)CE O * Collector-emitter Breakdown Voltage (IB =0) I C =10 mA 50 V V(BR)E BO Emitter-base Breakdown Voltage (IC =0) I E =10 µA6 V VCE (s at )* Collector-emitter Saturation Voltage I C =10 mA I C =100 mA I C =300 mA I C =500 mA I C =800 mA I C =1000 mA I B =1 mA I B =10 mA I B =30 mA I B =50 mA I B =80 mA I B = 100 mA 0.19 0.21 0.31 0.4 0.5 0.6 0.25 0.26 0.4 0.52 0.8 0.95 V V V V V V VBE (sat )* Base-emitter Saturation Voltage I C =10 mA I C =100 mA I C =300 mA I C =500 mA I C =800 mA I C =1000 mA I B =1 mA I B =10 mA I B =30 mA I B =50 mA I B =80 mA I B = 100 mA 0.9 0.64 0.75 0.89 1.0 1.1 0.76 0.86 1.1 1.2 1.5 1.7 V V V V V V h FE* DC Current Gain I C =10 mA I C =100 mA I C =300 mA I C =1000 mA I C =800 mA I C =500 mA VCE =1 V VCE =1 V VCE =1 V VCE =5 V VCE =2 V VCE =1 V 30 60 40 25 20 35 60 90 60 65 40 150 h fe High Frequency Current Gain IC =50 mA f = 100 MHz VCE =10 V 3 CCB O Collector-base Capacitance I E =0 f = 1 MHz VCB =10 V 10 pF CEB O Emitter-base Capacitance IC =0 f = 1 MHz VCB = 0.5 V 55 pF t on ** Turn-on Time I C =500 mA I B =50 mA VCC =30 V 35 ns t off** Turn off Time I C =500 mA I B1 =– IB2 = VCC =30 V 50 mA 60 ns * Pulsed : pulse duration = 300 µs, duty cycle = 1 %. ** See test circuit. THERMAL DATA Rth j-cas e R th j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 50 220 °C/W °C/W 2N3725 2/6 |
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