Data Sheet D14138EJ6V0DS

8

NP82N055EHE, NP82N055KHE, NP82N055CHE, NP82N055DHE, NP82N055MHE, NP82N055NHE

5)TO-220 (MP-25K)

6)TO-262 (MP-25SK)

4

10.0

± 0.2

3.8

± 0.2

φ

4.45

± 0.2

1.3

± 0.2

0.8

± 0.1

0.5

± 0.2

2.5

± 0.2

1.27

± 0.2

12 3

2.54 TYP.

2.54 TYP.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

4

12 3

10.0

± 0.2

4.45

± 0.2

1.3

± 0.2

0.8

± 0.1

1.27

± 0.2

0.5

± 0.2

2.5

± 0.2

2.54 TYP.

2.54 TYP.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.