NP84N055EHE-E2-AY datasheet(4/10 Pages) NEC

Part #	NP84N055EHE-E2-AY

Description	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

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Manufacturer	NEC [NEC]

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Data Sheet D14099EJ6V0DS

4

NP84N055EHE, NP84N055KHE, NP84N055CHE, NP84N055DHE, NP84N055MHE, NP84N055NHE

TYPICAL CHARACTERISTICS (TA = 25

°C)

Figure1. DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

0

25

50

75

100 125 150 175 200

20

40

60

80

100

TC - Case Temperature -

°C

0

Figure2. TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

TC - Case Temperature -

°C

0

25

50

75

100 125 150 175 200

280

240

200

160

120

80

40

0

VDS - Drain to Source Voltage - V

1

0.1

100

1

10

100

ID(pulse)

10

1000

1 ms

100

μs

PW

=

10

μs

ID(DC)

0.1

Figure3. FORWARD BIAS SAFE OPERATING AREA

TC = 25

°C

Single Pulse

Power

Dissipation

Limited

DC

R

DS(on)

Limited

(V

GS

=

10

V)

Figure4. SINGLE AVALANCHE ENERGY

DERATING FACTOR

Starting Tch - Starting Channel Temperature -

°C

25

50

75

100

125

150

175

450

400

350

300

250

200

150

100

50

0

56 A

84 A

313 mJ

441 mJ

70 mJ

IAS = 21 A

Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

PW - Pulse Width - s

10

0.01

0.1

1

100

1000

1 m

10 m

100 m

1

10

100

1000

Single Pulse

Rth(ch-A) = 83.3

°C/W

10

100

Rth(ch-C) = 0.75

°C/W

μ

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NP84N055EHE-E2-AY Datasheet(PDF) 4 Page - NEC

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