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TSM4953DCSRF Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM4953DCSRF Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 6 page  TSM4953D 30V Dual P-Channel MOSFET 2/6 Version: A07 Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = -250uA BVDSS -30 -- -- V Gate Threshold Voltage VDS = VGS, ID = -250µA VGS(TH) -1.0 -1.5 -3.0 V Gate Body Leakage VGS = ±24V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = -20V, VGS = 0V IDSS -- -- -1.0 µA On-State Drain Current a VDS =-5V, VGS = -10V ID(ON) -6 -- -- A VGS = -10V, ID = -4.9A -- 50 60 Drain-Source On-State Resistance a VGS = -4.5V, ID = -3.7A RDS(ON) -- 75 90 mΩ Forward Transconductance a VDS = -15V, ID = -4.9A gfs -- 10 -- S Diode Forward Voltage IS = -1.9A, VGS = 0V VSD -- -- -1.3 V Dynamic b Total Gate Charge Qg -- 28 -- Gate-Source Charge Qgs -- 3 -- Gate-Drain Charge VDS = -15V, ID = -4.9A, VGS = -10V Qgd -- 7 -- nC Input Capacitance Ciss -- 745 -- Output Capacitance Coss -- 440 -- Reverse Transfer Capacitance VDS = -15V, VGS = 0V, f = 1.0MHz Crss -- 120 -- pF Switching c Turn-On Delay Time td(on) -- 9 -- Turn-On Rise Time tr -- 15 -- Turn-Off Delay Time td(off) -- 75 -- Turn-Off Fall Time VDD = -15V, RL = 15Ω, ID = -1A, VGEN = -10V, RG = 6Ω tf -- 40 -- nS Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. |
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