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STTH4R02RL Datasheet(PDF) 5 Page - STMicroelectronics |
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STTH4R02RL Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 13 page STTH4R02 Characteristics 5/13 Figure 9. Junction capacitance versus reverse applied voltage (typical values) Figure 10. Reverse recovery charges versus dIF/dt (typical values) 10 100 1 10 100 1000 C(pF) F=1MHz V osc=30mVRMS T j=25°C VR(V) 0 20 40 60 80 100 120 0 50 100 150 200 250 300 350 400 450 500 Q RR(nC) I F=4A V R=160V T j=125°C T j=25°C dIF/dt(A/µs) Figure 11. Reverse recovery time versus dIF/dt (typical values) Figure 12. Peak reverse recovery current versus dIF/dt (typical values) 0 10 20 30 40 50 60 70 80 10 100 1000 t RR(ns) I F=4A V R=160V T j=125°C T j=25°C dIF/dt(A/µs) 0 2 4 6 8 10 0 50 100 150 200 250 300 350 400 450 500 I RM(A) I F=4A V R=160V T j=125°C T j=25°C dIF/dt(A/µs) Figure 13. Dynamic parameters versus junction temperature Figure 14. Thermal resistance, junction to ambient, versus copper surface under tab - DPAK (Epoxy printed circuit board FR4, eCU = 35 µm) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 Q RR;IRM [Tj]/ QRR;IRM [Tj=125°C] I RM Q RR I F=4A V R=160V Tj(°C) 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 35 40 R th(j-a)(°C/W) DPAK SCU(cm²) |
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