 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
FDP2614 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
|
||||||||||||||||||||||||||||||
FDP2614 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
|
|
2 / 8 page  2 www.fairchildsemi.com FDP2614 Rev. A Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1mH, IAS = 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 62A, di/dt ≤ 100A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDP2614 FDP2614 TO-220 - - 50 Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 200 -- -- V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.2 -- V/ °C IDSS Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V VDS = 200V, VGS = 0V, TJ = 125°C -- -- -- -- 10 500 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 4.0 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 31A -- 22.9 27 m Ω gFS Forward Transconductance VDS = 10V, ID = 31A (Note 4) -- 72 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V f = 1.0MHz -- 5435 7230 pF Coss Output Capacitance -- 505 675 pF Crss Reverse Transfer Capacitance -- 110 165 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 100V, ID = 62A VGS = 10V, RGEN = 25Ω (Note 4, 5) -- 77 165 ns tr Turn-On Rise Time -- 284 560 ns td(off) Turn-Off Delay Time -- 103 220 ns tf Turn-Off Fall Time -- 162 335 ns Qg Total Gate Charge VDS = 100V, ID = 62A VGS = 10V (Note 4, 5) -- 76 99 nC Qgs Gate-Source Charge -- 35 -- nC Qgd Gate-Drain Charge -- 18 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 62 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 186 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 62A -- -- 1.2 V trr Reverse Recovery Time VGS = 0V, IS = 62A dIF/dt =100A/μs (Note 4) -- 145 -- ns Qrr Reverse Recovery Charge -- 0.81 -- μC |
Similar Part No. - FDP2614 |
|
Similar Description - FDP2614 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
