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2MBI200NB-120-01 Datasheet(PDF) 2 Page - Fuji Electric |
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2MBI200NB-120-01 Datasheet(HTML) 2 Page - Fuji Electric |
2 / 4 page 保守廃止予定機種 Not recommend for new design. 2MBI200NB-120-01 IGBT Module Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=25°C Collector current vs. Collector-Emitter voltage Tj=125°C Collector-Emitter vs. Gate-Emitter voltage Tj=25°C Collector-Emitter vs. Gate-Emitter voltage Tj=125°C Switching time vs. Collector current Vcc=600V, RG=4.7 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current Vcc=600V, RG=4.7 ohm, VGE=±15V, Tj=125°C Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] 500 400 300 200 100 0 500 400 300 200 100 0 0 1 2 3 4 5 0 1 2 3 4 5 10 8 6 4 2 0 0 5 10 15 20 25 0 5 10 15 20 25 10 8 6 4 2 0 Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V] 1000 100 10 0 100 200 300 400 Collector current : Ic [A] 0 100 200 300 400 Collector current : Ic [A] 1000 100 10 |
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