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FAN7317M Datasheet(PDF) 8 Page - Fairchild Semiconductor |
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FAN7317M Datasheet(HTML) 8 Page - Fairchild Semiconductor |
8 / 23 page © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN7317 • 1.0.2 8 Electrical Characteristics (Continued) For typical values, TA = 25°C, VIN = 15V, and -25°C ≤ TA ≤ 85°C, unless otherwise specified. Specifications to -25°C ~ 85°C are guaranteed by design based on final characterization results. Protection Section Volp0 Open-Lamp Protection Voltage 0 (4) Open Lamp in Striking 0.95 1.00 1.05 V Volp1 Open-Lamp Protection Voltage 1 Open Lamp 0.44 0.51 0.58 V Vcmpr CMP-High Protection Voltage 2.95 3.05 3.15 V Varcp Arc Protection Voltage 2.90 3.05 3.20 V Vhfbp High-FB Protection Voltage (4) 3.4 3.5 3.6 V Vslp Short Lamp Protection Voltage 0.24 0.32 0.40 V Tolps Striking, foscb = 330Hz 1.6 s Tolpn Open-Lamp Protection Delay (4) Normal, fosc = 100kHz 10 ms Tcmprs Striking, foscb = 330Hz 1.6 s Tcmprn High-CMP Protection Delay (4) Normal, fosc = 100kHz 10 ms Tolr Open-Lamp Regulation Delay (4) Normal, fosc = 100kHz 320 µs Tslp Short Lamp Protection Delay (4) Normal, fosc = 100kHz 1 ms TSD Thermal Shutdown (4) 150 °C Output Section Vpdhv PMOS Gate High Voltage (4) VIN = 15V VIN V Vphlv PMOS Gate Low Voltage VIN = 15V VIN-6.5 VIN-7 VIN-7.5 V Vndhv NMOS Gate High Voltage VIN = 15V 6.5 7.0 7.5 V Vndlv NMOS Gate Low Voltage (4) VIN = 15V 0 V Vpuv PMOS Gate Voltage with UVLO Activated VIN = 4.5V VIN-0.3 V Vnuv NMOS Gate Voltage with UVLO Activated VIN = 4.5V 0.3 V Ipdsur PMOS Gate Drive Source Current (4) VIN = 15V -200 mA Ipdsin PMOS Gate Drive Sink Current (4) VIN = 15V 300 mA Indsur NMOS Gate Drive Source Current (4) VIN = 15V 200 mA Indsin NMOS Gate Drive Sink Current (4) VIN = 15V -300 mA tr Rising Time (4) VIN = 15V, Cload = 2nF 70 ns tf Falling Time (4) VIN = 15V, Cload = 2nF 70 ns Maximum / Minimum Overlap Minimum Overlap Between Diagonal Switches (4) fosc = 100kHz 0 % Maximum Overlap Between Diagonal Switches (4) fosc = 100kHz 86 90 % Dead Time PDR_A/NDR_B (4) 150 200 250 ns PDR_C/NDR_D (4) 150 200 250 ns Note: 4. These Parameters, although guaranteed, are not 100% tested in production. |
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