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XC9223D81AL Datasheet(PDF) 8 Page - Torex Semiconductor |
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XC9223D81AL Datasheet(HTML) 8 Page - Torex Semiconductor |
8 / 25 page 8/25 XC9223/XC9224 Series (*1) A capacitor of 2200pF~0.1μF is recommended to place at the C DD between the AGND pin and the VIN pin. Please refer to the page showing INSTRUCTION ON PATTERN LAYOUT for more detail. VOUT (V) RFB1 (k Ω) RFB2 (k Ω) CFB (pF) VOUT (V) RFB1 (k Ω) RFB2 (k Ω) CFB (pF) 1.0 75 300 110 2.5 510 240 15 1.2 150 300 51 3.0 330 120 24 1.5 130 150 62 3.3 470 150 18 1.8 300 240 27 5.0 430 82 18 ■TYPICAL APPLICATION CIRCUIT <Output Voltage Setting> Output voltage can be set by adding external split resistors. Output voltage is determined by the following equation, based on the values of RFB1 and RFB2. The sum of RFB1 and RFB2 should normally be 1M Ω or less. VOUT = 0.8 x (RFB1 + RFB2) / RFB2 The value of CFB, speed-up capacitor for phase compensation, should be fzfb = 1 / (2 x π x CFB1 x RFB1) which is equal to 20kHz. Adjustments are required from 1kHz to 50kHz depending on the application, value of inductance (L), and value of load capacity (CL). [Example of calculation] When RFB1=470k Ω, RFB2=150kΩ, VOUT1 = 0.8 x (470k + 150k) / 150k =3.3V [Typical example] [External components] 1MHz: L: 4.7 μH (CDRH4D28C, SUMIDA) CL: 10 μF (ceramic) CIN: 10 μF (ceramic) 2MHz: L: 2.2 μH (CDRH4D28, SUMIDA) 2.2 μH (VLCF4020T-2R2N1R7, TDK) CL: 10 μF (ceramic) CIN: 10 μF (ceramic) * As for CIN and CL, use output capacitors of 10 μF or more. (Ceramic capacitor compatible) * High ESR (Equivalent Series Resistance) that comes by using a tantalum or an electrolytic capacitor causes high ripple voltage. Furthermore, it can cause an unstable operation. Use the IC after you fully confirm with an actual device. * When fzfb = 20kHz |
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