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74VHCT132ATTR Datasheet(PDF) 3 Page - STMicroelectronics

Part No. 74VHCT132ATTR
Description  QUAD 2-INPUT SCHMITT NAND GATE
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
T est Cond ition s
Val ue
Un it
TA =25
oC
-40 to 85
oC
Min.
Typ .
Max.
Min .
Max.
CIN
Input Capacitance
6
10
10
pF
CPD
Power Dissipation
Capacitance (note 1)
18
pF
1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD
• VCC • fIN +ICC/4 (per Gate)
DC SPECIFICATIONS
Symb ol
Parameter
T est Cond ition s
Val ue
Un it
VCC
(V)
TA =25
oC
-40 to 85
oC
Min.
Typ .
Max.
Min .
Max.
Vt+
High Level Threshold
Voltage
4.5
2.0
2.0
V
5.5
2.0
2.0
Vt-
Low Level Threshold
Voltage
4.5
0.6
0.6
V
5.5
0.6
0.6
Vh
Hysteresis Voltage
4.5
0.4
1.4
0.4
1.4
V
5.5
0.4
1.5
0.4
1.5
VOH
High Level Output
Voltage
4.5
IO=-50
µA
4.4
4.5
4.4
V
4.5
IO=-8 mA
3.94
3.8
VOL
Low Level Output
Voltage
4.5
IO=50
µA
0.0
0.1
0.1
V
4.5
IO=8 mA
0.36
0.44
II
Input Leakage Current
0 to 5.5
VI = 5.5V or GND
±0.1
±1.0
µA
ICC
Quiescent Supply
Current
5.5
VI =VCC or GND
2
20
µA
∆ICC
Additional Worst Case
Supply Current
5.5
One Input at 3.4V,
other input at VCC or
GND
1.35
1.5
mA
IOPD
Output Leakage
Current
0VOUT = 5.5V
0.5
5.0
µA
AC ELECTRICAL CHARACTERISTICS (Input tr =tf =3 ns)
Symb ol
Parameter
Test Co nditi on
Val ue
Un it
VCC (*)
(V)
CL
(pF )
TA =25
oC
-40 to 85
oC
Min.
Typ .
Max.
Min .
Max.
tPLH
tPHL
Propagation Delay
Time
5.0
15
6.5
8.8
1.0
10.4
ns
5.0
50
7.2
9.8
1.0
11.4
(*) Voltage range is 5V
± 0.5V
74VHCT132A
3/7




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