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RM20TA-2H Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part # RM20TA-2H
Description  HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RM20TA-2H Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

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Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
MITSUBISHI DIODE MODULES
RM20TA-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
24
1200
1350
440
Symbol
VRRM
VRSM
Ea
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Recommended AC input voltage
Unit
A
A
A2s
Hz
°C
°C
V
N·m
kg·cm
g
Conditions
Three-phase full wave rectifying circuit, TC=100
°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
Mounting screw M6
Typical value
Ratings
40
400
6.7
× 102
1000
–40~+125
–40~+125
2500
1.96~2.94
20~30
190
Symbol
IO
IFSM
I2t
f
Tj
Tstg
Viso
—
—
Parameter
DC output current
Surge (non-repetitive) forward current
I2t for fusing
Maximum operating frequency
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Voltage class
2H
1600
1700
480
Unit
mA
V
°C/W
°C/W
M
Ω
Limits
Symbol
IRRM
VFM
Rth (j-c)
Rth (c-f)
—
Parameter
Repetitive reverse current
Forward voltage
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
Tj=125
°C, VRRM applied
Tj=25
°C, IFM=40A, instantaneous meas.
Junction to case
Case to fin, conductive grease applied
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
—
10
Typ.
—
—
—
—
—
Max.
2.0
1.25
0.24
0.06
—
ELECTRICAL CHARACTERISTICS


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