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TSM4435 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM4435 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 6 page  TSM4435 30V P-Channel MOSFET 2/6 Version: A07 Electrical Specifications Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = -250uA BVDSS -30 -- -- V Gate Threshold Voltage VDS = VGS, ID = -250µA VGS(TH) -1 -- -3 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = -30V, VGS = 0V IDSS -- -- -1.0 µA On-State Drain Current a VDS = -5V, VGS = -10V ID(ON) -40 -- -- A VGS = -10V, ID = -9.1A -- 17 21 Drain-Source On-State Resistance a VGS = -4.5V, ID = -6.9A RDS(ON) -- 25 35 mΩ Forward Transconductance a VDS = -10V, ID = -9.1A gfs -- 24 -- S Diode Forward Voltage IS = -2.1A, VGS = 0V VSD -- -0.8 -1.2 V Dynamic b Total Gate Charge Qg -- 33 70 Gate-Source Charge Qgs -- 5.8 -- Gate-Drain Charge VDS = -15V, ID = -9.1A, VGS = -10V Qgd -- 8.6 -- nC Input Capacitance Ciss -- 1573 1900 Output Capacitance Coss -- 319 -- Reverse Transfer Capacitance VDS = -15V, VGS = 0V, f = 1.0MHz Crss -- 211 295 pF Switching c Turn-On Delay Time td(on) -- 10 15 Turn-On Rise Time tr -- 15 25 Turn-Off Delay Time td(off) -- 110 170 Turn-Off Fall Time VDD = -15V, RL = 15Ω, ID = -1A, VGEN = -10V, RG = 6Ω tf -- 70 110 nS Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. |
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