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ACS102-5TX Datasheet(PDF) 6 Page - STMicroelectronics |
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ACS102-5TX Datasheet(HTML) 6 Page - STMicroelectronics |
6 / 8 page ACS102-5Tx 6/8 0.01 0.10 1.00 10.00 0.1 1.0 10.0 100.0 tp(ms) ITSM(A),I²t(A²s) Tj initial=25°C ITSM I²t dI/dt limitation: 20A/µs Fig. 11: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I 2t.. 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 0.01 0.10 1.00 5.00 VTM(V) ITM(A) Tj max. Vto = 0.85 V Rd = 400 m Ω Fig. 12: On-state characteristics (maximum values). 0 20 40 60 80 100 120 140 160 180 200 220 240 0 20 40 60 80 100 120 140 160 180 S(mm²) Rth(j-a) (°C/W) Fig. 13: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness under “com” pins: 35 µm) (ACS102-5T1). 0 10 20 30 40 50 60 70 80 90 100 110 120 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Tj(°C) (dI/dt)c [Tj] / (dI/dt)c [Tj=110°C] Fig. 14: Relative variation of critical (dI/dt)c versus junction temperature (ACS102-5T1). 1 10 100 1000 0 1 2 3 4 5 6 7 8 9 Number of cycles ITSM(A) Tj initial=25°C Non repetitive Tamb=25°C Repetitive One cycle t=20ms Fig. 10: Surge peak on-state current versus number of cycles. |
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