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AM1011-075 Datasheet(PDF) 1 Page - STMicroelectronics |
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AM1011-075 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 4 page September 1992 L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS .400 x .400 2LFL (S036) hermetically sealed . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . 10:1 VSWR CAPABILITY . LOW THERMAL RESISTANCE . INPUT/OUTPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE . POUT = 75 W MIN. WITH 9.2 dB GAIN DESCRIPTION The AM1011-075 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and tempera- tures and is capable of withstanding 10:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bond- ing techniques ensure high reliability and product consistency. The AM1011-075 is supplied in the AMPAC ™ Her- metic M etal/Ceramic package with i nternal Input/Output matching structures. PIN CONNECTION BRANDING 1011-75 ORDER CODE AM1011-075 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 100°C) 175 W IC Device Current* 5.4 A VCC Collector-Supply Voltage* 55 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C RTH(j-c) Junction-Case Thermal Resistance* 0.86 °C/W *Applies only to rated RF amplifier operation AM1011-075 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA 1/4 |
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