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AM1214-100 Datasheet(PDF) 1 Page - STMicroelectronics |
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AM1214-100 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 3 page PRELIMINARY DATA August 1992 L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS .400 x .500 2LFL (S038) hermetically sealed . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . LOW THERMAL RESISTANCE . INPUT/OUTPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE . POUT = 100 W MIN. WITH 6.0 dB GAIN DESCRIPTION The AM1214-100 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and tempera- tures and is capable of withstanding 3:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bond- ing techniques ensure high reliability and product consistency. AM1214-100 is supplied in the grounded IMPAC™ hermetic metal/ceramic package with internal input/output matching structures. PIN CONNECTION BRANDING 1214-100 ORDER CODE AM1214-100 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 100˚C) 270 W IC Device Current* 13.5 A VCC Collector-Supply Voltage* 32 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C RTH(j-c) Junction-Case Thermal Resistance* 0.55 °C/W *Applies only to rated RF amplifier operation AM1214-100 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA 1/3 |
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