AM81214-006 datasheet(1/4 Pages) STMICROELECTRONICS

Part #	AM81214-006

Description	RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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RF & MICROWAVE TRANSISTORS

L-BAND RADAR APPLICATIONS

. 310 x .310 2LF L (S064)

hermetically sealed

.

REFRACTORY/GOLD METALLIZATION

.

EMITTER SITE BALLASTED

.

5:1 VSWR CAPABILITY

.

LOW THERMAL RESISTANCE

.

INPUT/OUTPUT MATCHING

.

OVERLAY GEOMETRY

.

METAL/CERAMIC HERMETIC PACKAGE

.

POUT

= 5.5 W MIN. WITH 10 dB GAIN

DESCRIPTION

The AM81214-006 device is a high power Class

C transistor specifically designed for L-Band Ra-

dar pulsed driver applications.

This device is capable of operation over a wide

range of pulse widths, duty cycles, and tempera-

tures and is capable of withstanding 5:1 output

VSWR at rated RF conditions. Low RF thermal

resistance and computerized automatic wire

bond ing techniques ensure high reliability and

product consistency.

AM81214-006 is supplied in the grounded IM-

PAC

™ Hermetic Metal/Ceramic package with in-

ternal input/output matching structures.

PIN CONNECTION

BRANDI NG

81214-6

ORDER CODE

AM81214-6

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

PDISS

Power Dissipation*

(TC

≤ 100°C)

16.7

W

IC

Device Current*

0.82

A

VCC

Collector-Supply Voltage*

32

V

TJ

Junction Temperature (Pulsed RF Operation)

250

°C

TSTG

Storage Temperature

− 65 to +200

°C

RTH(j-c)

Junction-Case Thermal Resistance*

9.0

°C/W

*Applies only to rated RF amplifier operation

AM81214-006

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

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