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TMS28F200ST90BDBJE Datasheet(PDF) 3 Page - Texas Instruments

Part # TMS28F200ST90BDBJE
Description  262144 BY 8-BIT/131072 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TMS28F200ST90BDBJE Datasheet(HTML) 3 Page - Texas Instruments

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TMS28F002Axy, TMS28F200Axy
262144 BY 8-BIT/131072 BY 16-BIT
AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
SMJS826D – JANUARY 1996 – REVISED SEPTEMBER 1997
3
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
description
3
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
device symbol nomenclature
5
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
functional block diagram
6
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
architecture
6
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block-memory maps
6
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
boot-block data protection
7
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
parameter block
8
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
main block
8
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
data protection
8
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
command-state machine (CSM)
8
. . . . . . . . . . . . . . . . . . . . . . . . .
operation
8
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
command definition
9
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
status register
10
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
byte-wide or word-wide mode selection
11
. . . . . . . . . . . . . . . . . .
command-state-machine operations
13
. . . . . . . . . . . . . . . . . . . .
clear status register
13
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
read operations
13
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
programming operations
14
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
erase operations
14
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
automatic power-saving mode
15
. . . . . . . . . . . . . . . . . . . . . . . . . .
reset / deep power-down mode
15
. . . . . . . . . . . . . . . . . . . . . . . . .
power supply detection
15
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
common electrical parameter
20
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
absolute maximum ratings
20
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
capacitance
21
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TMS28F002ASy and TMS28F200ASy
22
. . . . . . . . . . . . . . . . . . . . . .
TMS28F002AEy and TMS28F200AEy
32
. . . . . . . . . . . . . . . . . . . . . .
TMS28F002AMy and TMS28F200AMy
42
. . . . . . . . . . . . . . . . . . . . .
TMS28F002AFy and TMS28F200AFy
50
. . . . . . . . . . . . . . . . . . . . . .
TMS28F002AZy and TMS28F200AZy
60
. . . . . . . . . . . . . . . . . . . . . .
Parameter Measurement Information
70
. . . . . . . . . . . . . . . . . . . . . . .
mechanical data
NO TAG
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Table of Contents
description
The TMS28F200Axy is a 262 144 by 8-bit / 131 072 by-16 bit (2 097 152-bit), boot-block flash memory that can
be electrically block-erased and reprogrammed. The TMS28F200Axy is organized in a blocked architecture
consisting of:
D One 16K-byte protected boot block
D Two 8K-byte parameter blocks
D One 96K-byte main block
D One 128K-byte main block
The device can be ordered in five different voltage configurations (see Table 1). Operation as a 256K-byte (8-bit)
or a 128K-word (16-bit) organization is user-definable.
The TMS28F002Axy is offered in a 256K-byte organization only. The operation for this device is the same as
the TMS28F200Axy and is offered in the same voltage configurations. TMS28F002Axy can be substituted for
the byte-wide TMS28F200Axy, with the latter being the generic name for this device family.
Embedded program and block-erase functions are fully automated by the on-chip write-state machine (WSM),
thereby simplifying these operations and relieving the system microcontroller of these secondary tasks. WSM
status can be monitored by an on-chip status register to determine the progress of program / erase tasks. The
device features user-selectable block-erasure.
The configurations are as follow:
D The TMS28F002ASy and the TMS28F200ASy configurations have the auto-select feature that allows
alternative read and program / erase voltages. Memory reads can be performed using 3.3-V VCC for
optimum power consumption or at 5-V VCC, for device performance. Erasing or programming the device
can be accomplished with 5-V VPP, which eliminates having to use a 12-V source and/or in-system voltage
converters. Alternatively, 12-V VPP operation exists for systems that already have a 12-V power supply,
which provides faster programming and erasing times. These configurations are offered in two different
temperature ranges: 0
°C to 70°C and – 40°C to 85°C.
D The TMS28F002AEy and the TMS28F200AEy configurations offer the auto-select feature of the
TMS28F200ASy with an extended VCC to a low 2.7-V to 3.6-V range (3-V nominal). Memory reads can be
performed using a 3-V VCC, allowing for more efficient power consumption than the ’ASy device.


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