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313E Datasheet(PDF) 1 Page - Hittite Microwave Corporation |
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313E Datasheet(HTML) 1 Page - Hittite Microwave Corporation |
1 / 6 page 5 5 - 28 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC313 / 313E General Description Features The HMC313 & HMC313E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifiers that operate from a single Vcc supply. The surface mount SOT26 amplifier can be used as a broadband gain stage or used with external matching for optimized narrow band applications. With Vcc biased at +5V, the HMC313 & HMC313E offers 17 dB of gain and +15 dBm of saturated power while only requiring 50 mA of current. P1dB Output Power: +14 dBm Output IP3: +27 dBm Gain: 17 dB Single Supply: +5V High Reliability GaAs HBT Process Ultra Small Package: SOT26 Included in the HMC-DK001 Designer’s Kit Ideal as a Driver & Amplifier for: • 2.2 - 2.7 GHz MMDS • 3.5 GHz Wireless Local Loop • 5.0 - 6.0 GHz UNII & HiperLAN Electrical Specifications, T A = +25 °C, Vcc = +5.0V Parameter Vcc = +5V Units Min. Typ. Max. Frequency Range DC - 6 GHz Gain 14 17 20 dB Gain Variation Over Temperature 0.02 0.03 dB/°C Input Return Loss 7dB Output Return Loss 6dB Reverse Isolation 30 dB Output Power for 1 dB Compression (P1dB) @ 1.0 GHz 11 14 dBm Saturated Output Power (Psat) @ 1.0 GHz 15 dBm Output Third Order Intercept (IP3) @ 1.0 GHz 24 27 dBm Noise Figure 6.5 dB Supply Current (Icc) 50 mA Note: Data taken with broadband bias tee on device output. Functional Diagram Typical Applications GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz v04.0307 |
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