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LL4148 Datasheet(PDF) 1 Page - DAESAN ELECTRONIC CORP. |
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LL4148 Datasheet(HTML) 1 Page - DAESAN ELECTRONIC CORP. |
1 / 3 page LL4148 SMALL SIGNAL SWITCHING DIODES Features Mechanical Data · Silicon epitaxial planar diode · Fast switching diodes · 500mW power dissipation · This diode is also available in the DO-35 case with the type designation 1N4148 · Case: Mini-MELF glass case(DO-35) · Weight: Approx. 0.05 gram Maximum Ratings And Electrical Characteristics Electrical characteristics (Ratings at 25℃ ambient temperature unless otherwise specified) (Ratings at 25℃ ambient temperature unless otherwise specified) Symbol Value Units Average rectified current, Half wave rectification with Resistive load at TA=25℃ and F≥50Hz mA 1501) Surge forward current at t<1S and TJ=25℃ ℃ -65 to +175 Storage temperature range ℃ Reverse Voltage Volts 75 VR IAV IFSM 500 TSTG Junction temperature TJ 175 mA 1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) Peak Reverse Voltage Volts 100 VRM Power dissipation at TA=25℃ mW 5001) Ptot Symbols Units Leakage current at VR=20V at VR=75V at VR=20V, TJ=150℃ Junction Capacitance at VR=VF=0V IR IR IR CJ Min. Thermal resistance, junction to Ambient Typ. Max. 25 5 50 4 3501) K/W Forward voltage Volts 1 VF RθJA pF Reverse Recovery time from IF=10mA to IR=1mA, VR=6V, RL=100Ω 4 ns trr 1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) Voltage rise when switching ON tested with 50mA pulse tp=0.1μS, Rise time<30μS, fp=5 to 100KHz Volts 2.5 Vfr Rectification efficiency at f=100MHz, VRF=2V 0.45 η Dimensions in inches and (millimeters) MELF (DO-35) 0.146(3.70) 0.130(3.30) 0.020(0.50) 0.011(0.28) SOLDERABLE ENDS 0.063(1.60) 0.051(1.30) nA μA μA |
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