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NTE2077 Datasheet(PDF) 2 Page - NTE Electronics

Part No. NTE2077
Description  Integrated Circuit 6−Stage Darlington Transistor Array w/Clamp Diode
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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Electrical Characteristics: (TA = −20° to +75°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
Collector−Emitter Breakdown Voltage V(BR)CEO ICER = 100μA
40
V
Collector−Emitter Saturation Voltage
VCE(sat) VI = 7V, IC = 150mA
1.1
1.7
V
()
VI = 7V, IC = 100mA
1.0
1.4
V
Input Current
Il
VI = 18V
0.9
1.8
mA
VI = 35V
1.9
5.0
mA
Input Reverse Current
IIR
VI = −35V
−20
μA
Clamping Diode Forward Voltage
VF
IF = −150mA
1.15
1.6
V
Clamping Diode Reverse Current
IR
VR = 40V
100
μA
DC Amplification Factor
hFE
VCE = 4V, IC = 150mA,
TA = +25°C
800 2500
Switching Characteristics: (TA = +25° unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Turn−On Time
ton
CL = 15pF (Note 1)
35
ns
Turn−Off Time
toff
300
ns
Note 1. Pulse generator (PG) characteristics: PRR = 1kHz, tw = 10
μs, tr = 6ns, ZO = 50Ω, VP = 7Vp−p
Pin Connection Diagram
Output 4
Output 1
Input 1
Input 5
Input 4
Output 5
Output 6
Output 2
1
2
3
4
Input 2
Input 3
5
6
Input 6
7
GND
14
13
12
11
Output 3
10
9
8 Common
.600 (15.24)
17
14
8
.300
(7.62)
.200 (5.08)
Max
.100 (2.45)
.099 (2.5) Min
.785 (19.95)
Max




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