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UCC28220DRG4 Datasheet(PDF) 10 Page - Texas Instruments |
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UCC28220DRG4 Datasheet(HTML) 10 Page - Texas Instruments |
10 / 30 page UCC28220, UCC28221 SLUS544C − SEPTEMBER 2003 − REVISED OCTOBER 2007 10 www.ti.com APPLICATION INFORMATION 15 1 2 R2 R1 R3 Input Voltage + UV HYS OV + 1.26 V + 1.26 V LINE_GOOD S1 OPEN S2 CLOSED 1.26 V R4 Figure 1. Line UVLO and OVLO Functional Diagram V1 V2 V3 V4 LINE_GOOD ENABLE OFF Figure 2. Line UVLO and OVLO Operation VDD Because the driver output impedance is high the energy storage requirements on the VDD capacitor is low. For improved noise immunity it is recommended that the VDD pin, be bypassed with a minimum of 0.1 µF of capacitance to GND. In most typical applications the bias voltage for the MOSFET drivers will also be used as the VDD supply voltage for the chip. In the aforementioned applications it is beneficial to add a low valued resistor between the bulk storage capacitor of the driver and the VDD capacitor for the UCC28220/1. By adding a resistor in series with the bias supply any noise that is present on the bias supply will be filtered out before getting to the VDD pin of the controller. |
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