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BD912 Datasheet(PDF) 1 Page - STMicroelectronics |
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BD912 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 6 page BD909/911 BD910/912 COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and BD912 respectively. INTERNAL SCHEMATIC DIAGRAM October 1999 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Un it NPN BD909 BD911 PNP BD910 BD912 VCBO Collector-Base Voltage (IE = 0) 80 100 V VCEO Collector-Emitter Voltage (IB = 0) 80 100 V VEBO Emitter-Base Voltage (IC =0) 5 V IE,IC Collector Current 15 A IB Base Current 5 A Ptot T otal Dissipation at Tc ≤ 25 oC 90 W Tstg Storage Temperat ure -65 t o 150 o C Tj Max. Operating Junction Temperature 150 o C For PNP types voltage and current values are negative. 1 2 3 TO-220 ® 1/6 |
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