NX3L1G66GM datasheet(5/16 Pages) PHILIPS

Part #	NX3L1G66GM

Description	Low-voltage analog switch

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Manufacturer	PHILIPS [NXP Semiconductors]

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5 / 16 page

NX3L1G66_1

Product data sheet

Rev. 01 — 3 January 2008

5 of 16

NXP Semiconductors

NX3L1G66

Low-voltage analog switch

11.1 Test circuits

11.2 ON resistance

[1]

Typical values are measured at Tamb =25 °C.

[2]

Flatness is deﬁned as the difference between the maximum and minimum value of ON resistance measured at identical VCC and

temperature.

VI = 0.3 V or VCC − 0.3 V; VO =VCC − 0.3 V or 0.3 V.

VI = 0.3 V or VCC − 0.3 V; VO = open circuit.

Fig 4.

Test circuit for measuring OFF-state leakage

current

Fig 5.

Test circuit for measuring ON-state leakage

current

001aag488

IS

VI

VIL

VO

VCC

GND

Y

Z

E

001aag489

IS

VI

VIH

VO

VCC

GND

Y

Z

E

Table 8.

ON resistance

At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 7 to Figure 12.

Symbol

Parameter

Conditions

−40 °C to +85 °C

−40 °C to +125 °C Unit

Min

Typ[1]

Max

Min

Max

RON(peak) ON resistance (peak)

VI = GND to VCC;

ISW = 100 mA;

see Figure 6

VCC = 1.4 V

-

1.6

3.7

-

4.1

Ω

VCC = 1.65 V

-

1.0

1.6

-

1.7

Ω

VCC = 2.3 V

-

0.55

0.8

-

0.9

Ω

VCC = 2.7 V

-

0.5

0.75

-

0.9

Ω

RON(ﬂat)

ON resistance (ﬂatness) VI = GND to VCC;

ISW = 100 mA

[2]

VCC = 1.4 V

-

1.0

3.3

-

3.6

Ω

VCC = 1.65 V

-

0.5

1.2

-

1.3

Ω

VCC = 2.3 V

-

0.15

0.3

-

0.35

Ω

VCC = 2.7 V

-

0.13

0.3

-

0.35

Ω

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