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BDX54F Datasheet(PDF) 2 Page - STMicroelectronics |
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BDX54F Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 4 page THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 2.08 70 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEO Collector Cut-off Current (IE = 0) VCE = 80 V 0.5 mA ICBO Collector Cut-off Current (IB = 0) VCB = 160 V 0.2 mA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 5 mA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 50 mA 160 V VCE(sat) ∗ Collector-emitter Saturation Voltage IC = 2 A IB =10 mA 2 V VBE(sat) ∗ Base-emitter Saturation Voltage IC = 2 A IB =10 mA 2.5 V hFE ∗ DC Current Gain IC = 2 A VCE = 5 V IC = 3 A VCE = 5 V 500 150 VF ∗ Parallel Diode Forward Voltage IF = 2 A 2.5 V hfe ∗ Small Signal Current Gain IC = 0.5 A f = 1MHz VCE = 2 V 20 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. BDX54F 2/4 |
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