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BTA16-800B Datasheet(PDF) 2 Page - STMicroelectronics |
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BTA16-800B Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 5 page GATE CHARACTERISTICS (maximum values) Symbol Parameter Value Unit Rth (j-a) Junction to ambient 60 °C/W Rth (j-c) DC Junction to case for DC BTA 2.9 °C/W BTB 2.3 Rth (j-c) AC Junction to case for 360 ° conduction angle ( F= 50 Hz) BTA 2.2 °C/W BTB 1.75 Symbol Test Conditions Quadrant Suffix Unit B IGT VD=12V (DC) RL=33Ω Tj=25 °C I-II-III MAX 50 mA IV MAX 100 VGT VD=12V (DC) RL=33Ω Tj=25 °C I-II-III-IV MAX 1.5 V VGD VD=VDRM RL=3.3kΩ Tj=125 °C I-II-III-IV MIN 0.2 V tgt VD=VDRM IG = 500mA dIG/dt = 3A/µs Tj=25 °C I-II-III-IV TYP 2 µs IL IG=1.2 IGT Tj=25 °C I-III-IV TYP 40 mA II 70 IH *IT= 500mA gate open Tj=25 °C MAX 50 mA VTM *ITM= 22.5A tp= 380µs Tj=25 °C MAX 1.6 V IDRM IRRM VDRM Rated VRRM Rated Tj=25 °C MAX 0.01 mA Tj=125 °C MAX 2 dV/dt * Linear slope up to VD=67%VDRM gate open Tj=125 °C MIN 250 V/ µs (dV/dt)c * (dI/dt)c = 7A/ms Tj=125 °C MIN 10 V/ µs * For either polarity of electrode A2 voltage with reference to electrode A1. PG (AV) =1W PGM = 10W (tp = 20 µs) IGM =4A (tp =20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS THERMAL RESISTANCES BTA16 B / BTB16 B 2/5 |
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