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BU941ZP Datasheet(PDF) 2 Page - STMicroelectronics |
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BU941ZP Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 8 page THERMAL DATA TO-3 TO-218 ISOW AT T218 Rthj-ca se Thermal Resistance Junct ion-case Max 0.97 0.97 2.3 oC/W ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it ICEO Collector Cut -of f Current (IB =0) VCE =300 V VCE =300 V Tj =125 oC 100 0.5 µA mA IEBO Emitt er Cut -of f Current (IC =0) VEB =5 V 20 mA VCL ∗ Clamping Voltage IC = 100 mA 350 500 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC =8 A IB =100 mA IC =10 A IB =250 mA IC =12 A IB =300 mA 1.8 1.8 2 V V V VBE(s at) ∗ Base-Emitter Saturation Voltage IC =8 A IB =100 mA IC =10 A IB =250 mA IC =12 A IB =300 mA 2.2 2.5 2.7 V V V hFE ∗ DC Current Gain IC =5 A VCE = 10 V 300 VF Diode F orward Voltage IF =10 A 2.5 V Funct ional T est (see fig. 1) VCC =24 V L= 7 mH 10 A ts tf INDUCTIVE LO AD St orage Time Fall Time (see fig. 3) VCC =12 V L= 7 mH VBE =0 RBE =47 Ω Vcla mp =300 V IC =7 A IB =70 mA 15 0.5 µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area DC Current Gain BU941Z/BU941ZP/BU941ZPFI 2/8 |
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